P-Channel MOSFET. 2SJ293 Datasheet

2SJ293 MOSFET. Datasheet pdf. Equivalent


Part 2SJ293
Description Silicon P-Channel MOSFET
Feature 2SJ293 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistanc.
Manufacture Hitachi
Datasheet
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2SJ293 Silicon P-Channel MOS FET Application High speed pow 2SJ293 Datasheet
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2SJ293
2SJ293
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S
November 1996



2SJ293
2SJ293
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ² 10 µs, duty cycle ² 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg ³ 50 ½
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
–60
±20
–15
–60
–15
–15
19
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2







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