PowerTrench MOSFET. FDB8453LZ Datasheet

FDB8453LZ MOSFET. Datasheet pdf. Equivalent


Part FDB8453LZ
Description N-Channel PowerTrench MOSFET
Feature FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.0mΩ Fea.
Manufacture Fairchild Semiconductor
Datasheet
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FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel FDB8453LZ Datasheet
Recommendation Recommendation Datasheet FDB8453LZ Datasheet




FDB8453LZ
FDB8453LZ
N-Channel PowerTrench® MOSFET
40V, 50A, 7.0m
Features
„ Max rDS(on) = 7.0mat VGS = 10V, ID = 17.6A
„ Max rDS(on) = 9.0mat VGS = 4.5V, ID = 14.9A
„ HBM ESD protection level of 7.6kV typical (note 4)
„ Fast Switching
„ RoHS Compliant
August 2007
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
„ Inverter
„ Power Supplies
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
50
74
16.1
100
253
66
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.88
40
°C/W
Device Marking
FDB8453LZ
Device
FDB8453LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
1
www.fairchildsemi.com



FDB8453LZ
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
40
V
ID = 250µA, referenced to 25°C
36 mV/°C
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 17.6A
VGS = 4.5V, ID = 14.9A
VGS = 10V, ID = 17.6A,
TJ = 125°C
VDS = 5V, ID = 17.6A
1.0 1.8 3.0
V
-6.0 mV/°C
6.3 7.0
7.3 9.0 m
9.9 11
84 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
2665
325
200
2.2
3545
430
295
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 20V, ID = 17.6A,
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 5V
VDD = 20V,
ID = 17.6A
11 20 ns
6 13 ns
37 60 ns
5 11 ns
47 66 nC
25 35 nC
7 nC
9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.6A
VGS = 0V, IS = 17.6A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 17.6A, di/dt = 100A/µs
0.7 1.2
0.8 1.3
V
24 38 ns
15 27 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V.
4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
2
www.fairchildsemi.com







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