FDB8453LZ N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
40V, 50A, 7.0mΩ
Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A HBM ESD protection level of 7.6kV typical (note 4)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Inverter Power Supplies
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous.