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FDB8453LZ Data Sheet

N-Channel PowerTrench MOSFET

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FDB8453LZ
FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.0mΩ Features „ Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A „ Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A „ HBM ESD protection level of 7.6kV typical (note 4) „ Fast Switching „ RoHS Compliant August 2007.
FDB8453LZ

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FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.0mΩ Features „ Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A „ Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A „ HBM ESD protection level of 7.6kV typical (note 4) „ Fast Switching „ RoHS Compliant August 2007 tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous.



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