STI6N80K5

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages Datasheet - production data TAB 3 1 D2PAK TAB TAB 3 1 DPAK TAB Features Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB) Industry’s lowest RDS(on) Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected G(1) S(3) AM01476v1 Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB6N80K5 STD6N80K5 STI6N80K5 STP6N80K5 Table 1. Device summary ...