STI6N90K5

STI6N90K5 N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in an I²PAK package Datasheet - production data TAB 123 I²PAK Figure 1: Internal schematic diagram Features Order code STI6N90K5 VDS 900 V RDS(on) max. 1.10 Ω ID 6A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STI6N90K5 Table 1: Device summary Marking Package 6N90K5 I²PAK Packing Tube November 2016 DocID029949 Rev 1 This is information on a product in full production. 1/12 www.st.com Contents Contents STI6N90K5 1 Electrical ratings.......