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PFP12N65 / PFF12N65
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP12N65/PFF12N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 0.46 Ω ID = 12 A
Drain
Gate
●
◀▲
● ●
Source
TO-220
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP12N65
PFF12N65
VDSS ID
IDM VGS EAS IAR EAR dv/dt PD
TJ, TSTG VISO TL
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Sing.