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PFP12N65 Dataheets PDF



Part Number PFP12N65
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Description 650V N-Channel MOSFET
Datasheet PFP12N65 DatasheetPFP12N65 Datasheet (PDF)

PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP12N65/PFF12N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.4.

  PFP12N65   PFP12N65


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PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP12N65/PFF12N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.46 Ω ID = 12 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP12N65 PFF12N65 VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG VISO TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Sing.


8mF62763 PFP12N65 PFF12N65


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