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AON6366E Dataheets PDF



Part Number AON6366E
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Datasheet AON6366E DatasheetAON6366E Datasheet (PDF)

AON6366E 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications • NB Battery Pack Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 34A < 3.7mΩ < 5.2mΩ HBM Class 2 Top View DFN5X6 Bottom View PIN1 PIN1 Top View 18 27 36 45 D G S Orderable.

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AON6366E 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications • NB Battery Pack Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 34A < 3.7mΩ < 5.2mΩ HBM Class 2 Top View DFN5X6 Bottom View PIN1 PIN1 Top View 18 27 36 45 D G S Orderable Part Number AON6366E Package Type DFN 5X6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA.


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