Document
AON6366E
30V N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant
Applications
• NB Battery Pack
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
30V 34A < 3.7mΩ < 5.2mΩ
HBM Class 2
Top View
DFN5X6
Bottom View
PIN1
PIN1
Top View
18 27 36 45
D
G S
Orderable Part Number
AON6366E
Package Type
DFN 5X6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.1mH
C
VGS ID
IDM IDSM
IAS EAS
VDS Spike
10µs
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA.