H2N60U MOSFET Datasheet

H2N60U Datasheet, PDF, Equivalent


Part Number

H2N60U

Description

N-Channel MOSFET

Manufacture

HAOHAI

Total Page 7 Pages
Datasheet
Download H2N60U Datasheet


H2N60U
2A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQU2N60C
FQD2N60C
公司型号
H2N60U
H2N60D
通俗命名
2N60
H
HAOHAI
封装标识
U: TO-251
D: TO-252
包装方式
条管装
卷盘装
每管数量
80/
2.5K/
2N60 Series
N-Channel MOSFET
每盒数量
4Kpcs/
5Kpcs/
每箱数量
24Kpcs
25Kpcs
 ■Features
  Originative New Design
  Superior Avalanche Rugged Technology
  Robust Gate Oxide Technology
  Very Low Intrinsic Capacitances
  Excellent Switching Characteristics
  Unrivalled Gate Charge: 5.5nC(Typ.)
  Extended Safe Operating Area
  Lower RDS(ON): 4.0(Typ.) @ VGS=10V
  100% Avalanche Tested
  Package: TO-251 & TO-252IPAK & DPAK
ID=1.8A
BVDSS=600V
RDS(on)=4.0
 ■特点
  导通电阻低,开关速度快,驱动简单,可并联使用,输入阻抗高,符合RoHS规范
 ■应用范围
  开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
  各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
  风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
 ■封装形式
  TO-251IPAK
  TO-252DPAK
2N60 Series Pin Assignment
3-Lead Plastic TO-251
Package Code: U
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-252
Package Code: D
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol:
1G
3S
Absolute Maximum RatingsTC=25unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain CurrentContinuousTC=25℃)
Drain CurrenContinuousTC=100℃)
IDM Drain Current – PulsedNote 1
VGS Gate-Source Voltage
EAS Single Pulsed Avalanche EnergyNote 2
IAR Avalanche CurrentNote 1
EAR Repetitive Avalanche EnergyNote 1
dv/dt
Peak Diode Recovery dv/dtNote 3
Power DissipationTA=25℃)*
PD Power DissipationTC=25℃)
Power Dissipation - Derate above 25
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient *
RθJA Junction-to-Ambient
  * When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Value
600
1.8
1.1
7.2
±30
116
1.8
4.2
4.5
2.5
42
0.34
-50 ~ +150
300
Max.
2.98
50
110
Units
V
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共7
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
H2N60C-UD-BUC

H2N60U
2A, 600V, N沟道 场效应晶体管 产品参数规格书
Electrical CharacteristicsTC=25unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=VGS, ID=250μA
VGS=10V, ID=0.9A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V, ID=250μA
ID=250μA, Referenced to 25
VDS=600V, VGS=0V
VDS=480V, TC=25
VGS=±30V, VDS=0V
2.5
--
600
--
--
--
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V
VGS=0V
f=1.0MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=300V
ID=2A
RG=25
Note 4,5
VDS=480V, ID=2.0A
VGS=10VNote 4,5
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage
IS=1.8A, VGS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
  Notes:
  1. Repetitive Rating: Pulse width limited by maximum junction temperature
  2. L=53mH, I AS =2A, V DD =50V, R G =25, Starting T J =25
  3. I SD 1.8A, di/dt 200A/μS, V DD BV DSS , Starting T J =25
  4. Pulse Test: Pulse Width 300μS, Duty Cycle 2%
  5. Essentially Independent of Operating Temperature
IS=2.0A, VGS=0V
diF/dt=100μA/μsNote 4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2N60 Series
N-Channel MOSFET
Typ. Max. Units
-- 4.5 V
4.0 5.0
-- -- V
0.6 -- V/
-- 1
μA
-- 10
--
±100
nA
320 420
38 50 pF
6.5 8.5
20 50
20 50
nS
30 70
20 50
5.5 7.5
1.8 -- nC
3.5 --
--
--
--
206
0.76
1.8
A
7.2
1.4 V
-- nS
-- μC
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
2页 共7
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
H2N60C-UD-BUC


Features .
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