40N03 FET Datasheet

40N03 Datasheet, PDF, Equivalent


Part Number

40N03

Description

N-Channel Enhancement Mode PowerMos FET

Manufacture

SeCoS

Total Page 5 Pages
Datasheet
Download 40N03 Datasheet


40N03
SID40N03
Elektronische Bauelemente
36A, 30V,RDS(ON)21m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID40N03 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Repetitive Avalanche Rated
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Fast Switching
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
5.6±0.2
7.0±0.2
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
Dimensions in millimeters
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Marking Code: 40N03
G XXXX(Date Code)
S
Symbol
VDS
VGS
ID@TC=25oC
ID@TC=100oC
IDM
PD@TC=25oC
Tj, Tstg
Ratings
30
± 20
36
25
150
50
0.4
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
2.5
110
Unit
oC /W
oC /W
Any changing of specification will not be informed individual
Page 1 of 5

40N03
Elektronische Bauelemente
SID40N03
36A, 30V,RDS(ON)21m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current(Tj=150oC)
IGSS
IDSS
Static Drain-Source On-Resistance
RD S(O N )
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
30
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
Max.
_
0.037
_
_
_
_
18
24
17
3
10
7.2
60
22.5
10
800
380
133
26
_
3.0
±100
25
250
21
30
_
_
_
_
_
_
_
_
_
_
_
Unit
V
V/ oC
Test Condition
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
V VDS=VGS, ID=250uA
nA VGS=±20V
uA VDS=30V,VGS=0
uA VDS=24V,VGS=0
VGS=10V, ID=18A
m
VGS=4.5V, ID=14A
ID=18 A
nC VDS=24V
VGS= 5V
VDD=15V
ID=18A
nS VGS=10V
RG=3.3
RD=0.83
VGS=0V
pF VDS=25V
f=1.0MHz
S VDS=10V, ID=18A
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
_
_
_
Typ.
_
_
_
Max.
1.3
36
150
Unit
V
Test Condition
IS=36 A, VGS=0V.Tj=25oC
A VD=VG=0V,VS=1.3 V
A
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5


Features SID40N03 Elektronische Bauelemente 36A , 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Prod uct Description The SID40N03 provide t he designer with the best combination o f fast switching, ruggedized device des ign, low on-resistance and cost-effecti veness. The TO-251 is universally prefe rred for all commercial-industrial surf ace mount applications and suited for l ow voltage applications such as DC/DC c onverters. Features * Repetitive Avalan che Rated * Dynamic dv/dt Rating * Simp le Drive Requirement * Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5 ±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2 ±0.3 0.75±0.15 0.6±0.1 G 2.3REF. D S 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current,VGS@10V Cont inuous Drain Current,VGS@10V Pulsed Dra in Current1 Total Power Dissipation Lin ear Derating Factor Operating Junction and Storage Temperature Range Marking Code: 40N03 G XXXX(Date .
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