Document
Oct 2008
PFM1N80
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 7.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers Switch mode power supply (SMPS) DC-AC converters.
PFM1N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 13.0 Ω ID = 1.0* A
Drain
Gate
●
◀▲
● ●
Source
TO-92
12 3 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery d.