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PFM1N80 Dataheets PDF



Part Number PFM1N80
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Description N-Channel MOSFET
Datasheet PFM1N80 DatasheetPFM1N80 Datasheet (PDF)

Oct 2008 PFM1N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 7.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFM1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13.0 Ω ID = 1.0* A Drain  Gate  ● ◀▲ ● ●  Source .

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Oct 2008 PFM1N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 7.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFM1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13.0 Ω ID = 1.0* A Drain  Gate  ● ◀▲ ● ●  Source TO-92 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery d.


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