PFU5N90G

PFU5N90G / PFD5N90G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 3.2 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFU5N90G / PFD5N90G 900V N-Channel MOSFET BVDSS = 900 V RDS(on) = 3.2 Ω ID = 4.0 A I-PAK(TO-251) G D S Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (...