PFF10N80E

PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 49.6 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.93 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP10N80E / PFF10N80E 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 0.93 Ω ID = 9.6 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP10N80E PFF10N80E VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanc...