PFF7N80E

PFP7N80E / PFF7N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 30 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.45 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP7N80E / PFF7N80E 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.45 Ω ID = 6.7 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP7N80E PFF7N80E VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energ...