N-Channel MOSFET
June 2007
PFP7N80 / PFF7N80
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extreme...
Description
June 2007
PFP7N80 / PFF7N80
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.55 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFP7N80/PFF7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) = 1.9 Ω ID = 7.0 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP7N80
PFF7N80
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche ...
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