PFI7N80G

June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.55 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFI7N80G/PFB7N80G 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.9 Ω ID = 7.0 A TO-262(I2-PAK) 1 2 3 1. Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source TO-263(D2-PAK) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage ...