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PFU6N80G

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N-Channel MOSFET

Description
PFU6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power su...


Wing On

PFU6N80G

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