PFI10N80A

PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFI10N80A/PFB10N80A 750V N-Channel MOSFET BVDSS = 750 V RDS(on) = 1.15 Ω ID = 8.0 A I2-PAK 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note...