PFF4N70E

PFP4N70E / PFF4N70E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.45 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFP4N70E / PFF4N70E 650V N-Channel MOSFET BVDSS = 700 V RDS(on) = 2.45 Ω ID = 4.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP4N70E PFF4N70E VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanch...