DatasheetsPDF.com

PFD4N70EG Dataheets PDF



Part Number PFD4N70EG
Manufacturers Wing On
Logo Wing On
Description N-Channel MOSFET
Datasheet PFD4N70EG DatasheetPFD4N70EG Datasheet (PDF)

PFU4N70EG / PFD4N70EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. Green Package PFU4N70EG/PFD4N70EG 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 2.3 Ω ID = 2.85.

  PFD4N70EG   PFD4N70EG



Document
PFU4N70EG / PFD4N70EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. Green Package PFU4N70EG/PFD4N70EG 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 2.3 Ω ID = 2.85 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (No.


PFU4N70EG PFD4N70EG PFU6N70EG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)