PFU6N70EGS-H

PFU6N70EGS-H 123 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 13.6 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFU6N70EGS-H 700V N-Channel MOSFET BVDSS = 700 V RDS(on) = 1.50 Ω ID = 5.5 A I-PAK(TO-251) Short Lead Drain  Gate  ● ◀▲ ● ●  Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche ...