N-Channel MOSFET
Aug 2006
PFU2N60 / PFD2N60
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremel...
Description
Aug 2006
PFU2N60 / PFD2N60
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 9.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers Switch mode power supply (SMPS) DC-AC converters.
PFU2N60 / PFD2N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2.0 A
I-PAK(TO-251)
1 2 3
1.Gate 2. Drain 3. Source
Drain
Gate
●
◀▲
● ●
Source
D-PAK(TO-252)
2
1 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(...
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