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PFD1N60
N-Channel MOSFET
Description
Aug 2006 PFU1N60 / PFD1N60 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 8.3 Ω (Typ.) @VGS=10V APPLICATION Low power battery chargers Switch mode power...
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