PFU7N60EG

PFU7N60EG / PFD7N60EG Green Package FEATURES  Originative New Design PFU7N60EG / PFD7N60EG 600V N-Channel MOSFET  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.) BVDSS = 600 V RDS(on) = 1.20 Ω Drain  Gate  ● ◀▲ ● ●  Extended Safe Operating Area  Lower RDS(ON) : 1.20 Ω (Typ.) @VGS=10V  Halogen Free ID = 5.8 A I-PAK(TO-251)  Source D-PAK(TO-252) APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) 1 2 3 1.Gate 2. Drain 3. Source 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-...