Document
PFU7N60EG / PFD7N60EG
Green Package
FEATURES
Originative New Design
PFU7N60EG / PFD7N60EG
600V N-Channel MOSFET
100% EAS Test
Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 17 nC (Typ.)
BVDSS = 600 V RDS(on) = 1.20 Ω
Drain
Gate
●
◀▲
● ●
Extended Safe Operating Area
Lower RDS(ON) : 1.20 Ω (Typ.) @VGS=10V Halogen Free
ID = 5.8 A
I-PAK(TO-251)
Source
D-PAK(TO-252)
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
1 2 3
1.Gate 2. Drain 3. Source
2
1 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-.