PFP730E

PFP730E / PFF730E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP730E/PFF730E 400V N-Channel MOSFET BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 6.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP730E PFF730E VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage 400 6.0 6.0* 3.8 3.8* 24 24* ±30 EAS Single Pulse...