Document
PFP730E / PFF730E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFP730E/PFF730E
400V N-Channel MOSFET
BVDSS = 400 V RDS(ON) = 0.7 Ω ID = 6.0 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25oC unless otherwise specified
Symbol
Parameter
PFP730E
PFF730E
VDSS ID
IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25oC)
– Continuous (TC = 100oC)
– Pulsed
(Note 1)
Gate-Source Voltage
400 6.0 6.0* 3.8 3.8* 24 24*
±30
EAS Single Pulse.