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PFF10N40

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N-Channel MOSFET


Description
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 23 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.44 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridg...



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PFF10N40

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