PFP830E

PFP830E / PFF5N50E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.1 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP830E / PFF5N50E 500V N-Channel MOSFET BVDSS = 500 V RDS(ON) = 1.1 Ω ID = 5.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP830E PFF5N50E VDSS Drain-Source Voltage 500 ID Drain Current – Continuous (TC = 25oC) 5.0 5.0* Drain Current – Continuous (TC = 100oC) 3.1 3.1* IDM Drain Current – Pulsed (Note 1) 20 20* VGS Gate-Source Voltage ±30 EAS...