N-Channel MOSFET
Aug 2008
PFI8N50 / PFB8N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremel...
Description
Aug 2008
PFI8N50 / PFB8N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFI8N50/PFB8N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.85 Ω ID = 8.0 A
Drain
Gate
●
◀▲
● ●
Source
I2-PAK
D2-PAK
D
G D S
G S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetit...
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