PFB8N50

Aug 2008 PFI8N50 / PFB8N50 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 25 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFI8N50/PFB8N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.85 Ω ID = 8.0 A Drain  Gate  ● ◀▲ ● ●  Source I2-PAK D2-PAK D G D S G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetit...