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PFJ20N50
N-Channel MOSFET
Description
PFJ20N50 / PFW20N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 60 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V APPLICATION High current, High speed switching Suitable for powe...
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