PFJ20N60

PFJ20N60 / PFW20N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 66 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.30 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFJ20N60 / PFW20N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 0.30 Ω ID = 20.0 A TO-247 Drain  Gate  ● ◀▲ ● ●  Source TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25oC) – Continuous (TC = 100oC) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanc...