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PFW20N60

N-Channel MOSFET

Description

PFJ20N60 / PFW20N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 66 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.30 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for powe...

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