Document
May 2007
PFJ10N80 / PFW10N80
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.92 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitable for power supplies, adaptors and PFC SMPS (Switched Mode Power Supplies)
PFJ10N80/PFW10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) = 1.15 Ω ID = 10 A
TO-247
Drain
Gate
●
◀▲
● ●
Source
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(.