N-channel SiC power MOSFET
SCT3040KL
N-channel SiC power MOSFET
Datasheet
VDSS RDS(on) (Typ.)
ID PD
1200V 40mW 55A 262W
lFeatures 1) Low on-res...
Description
SCT3040KL
N-channel SiC power MOSFET
Datasheet
VDSS RDS(on) (Typ.)
ID PD
1200V 40mW 55A 262W
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant
lApplication Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives
lOutline
TO-247N
lInner circuit
(1)(2)(3)
(1) Gate (2) Drain (3) Source
*1 Body Diode
lPackaging specifications Packing
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 30
C11 SCT3040KL
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate-Source Surge Voltage (tsurge < 300nsec)
Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg
Value 1200
55 39...
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