70R380P MOSFET Datasheet

70R380P Datasheet, PDF, Equivalent


Part Number

70R380P

Description

N-Channel MOSFET

Manufacture

MagnaChip

Total Page 10 Pages
Datasheet
Download 70R380P Datasheet


70R380P
MME70R380P Datasheet
MME70R380P
700V 0.38N-channel MOSFET
Description
MME70R380P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
750
0.38
3
11
34
Unit
V
V
A
nC
Package & Internal Circuit
D
D
G
S
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
Marking
MME70R380PRH 70R380P
Temp. Range
-55 ~ 150
Package
TO-263
(D2-PAK)
Jul. 2014 Revision 1.0
1
Packing
Reel
RoHS Status
Halogen Free
MagnaChip Semiconductor Ltd.

70R380P
MME70R380P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(2)
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
dv/dt
Tstg
Tj
Rating
700
±30
11
7
33
101
215
50
15
-55 ~150
150
Unit
V
V
A
A
A
W
mJ
V/ns
V/ns
Note
TC=25
TC=100
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
1.24
62.5
Unit
/W
/W
Jul. 2014 Revision 1.0
2 MagnaChip Semiconductor Ltd.


Features MME70R380P Datasheet MME70R380P 700V 0. 38Ω N-channel MOSFET  Description MME70R380P is power MOSFET using magnac hip’s advanced super junction technol ogy that can realize very low on-resist ance and gate charge. It will provide m uch high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of L ow EMI to designers as well as low swit ching loss.  Key Parameters Parame ter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 0.38 3 11 34 Unit V Ω V A nC  Package & Internal Cir cuit D D G S G S  Features  L ow Power Loss by High Speed Switching a nd Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free P lating, Halogen Free  Applications  PFC Power Supply Stages  Switchi ng Applications  Adapter  Motor C ontrol  DC – DC Converters  Or dering Information Order Code Marking MME70R380PRH 70R380P Temp. Range -55 ~ 150℃ Package TO-263 (D2-PAK) Jul. 2014 Revision 1.0 1 .
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