PTM16003

PTM16003 PTM16003 NPN Silicon Power Transistor 1.5 Amperes / 1.1 Watts Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage (VEB=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCES VCEO VEBO IC ICP PC TJ TSTG Electrical Characteristics TC=25℃ unless otherwise noted CHARACTERISTICS Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Fall Time SYMBOL VCEO IEBO hFE1 hFE2 hFE3 hFE1 / hFE2 VCE(sat) VBE(sat) fT tstg tf Test Condition IC=5mA, IB=0 VEB=9V,IC=0 VCE=10V,IC=1mA VCE=10V,IC=0.4A...