IS42S16800D

IS42S81600D IS42S16800D 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JULY 2008 FEATURES Clock frequency: 166, 143, 133 MHz Fully synchronous; all signals referenced to a positive clock edge Internal bank for hiding row access/precharge Power supply IS42S81600D VDD VDDQ 3.3V 3.3V IS42S16800D 3.3V 3.3V LVTTL interface Programmable burst length – (1, 2, 4, 8, full page) Programmable burst sequence: Sequential/Interleave Auto Refresh (CBR) Self Refresh with programmable refresh periods 4096 refresh cycles every 64 ms Random column address every clock cycle Programmable CAS latency (2, 3 clocks) Burst read/write and burst read/single write operations capability Burst termination by burst stop and precharge command Industrial Temperature Availability Lead-free Availability OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals ...