512M x 16 8Gb DDR3 SDRAM
IS43/46TR16512A, IS43/46TR16512AL
512Mx16 8Gb DDR3 SDRAM
FEATURES Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V L...
Description
IS43/46TR16512A, IS43/46TR16512AL
512Mx16 8Gb DDR3 SDRAM
FEATURES Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
-Backward compatible to 1.5V High speed data transfer rates with system
frequency up to 933 MHz 8 internal banks for concurrent operation 8n-Bit pre-fetch architecture Programmable CAS Latency Programmable Additive Latency: 0, CL-1,CL-2 Programmable CAS WRITE latency (CWL) based
on tCK Programmable Burst Length: 4 and 8 Programmable Burst Sequence: Sequential or
Interleave BL switch on the fly Auto Self Refresh(ASR) Self Refresh Temperature(SRT)
OPTIONS Configuration: 512Mx16(dual die) Package: 96-ball BGA (10mm x 14mm)
ADDRESS TABLE
FEBRUARY 2018
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh Asynchronous RESET pin OCD (Off-Chip Driver Impedance Adjus...
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