CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2510F3
Spec. No. : C603F3 Issued Date : 2011.06.08 Revised...
CYStech Electronics Corp.
NPN Epitaxial Planar
Transistor
BTD2510F3
Spec. No. : C603F3 Issued Date : 2011.06.08 Revised Date : Page No. : 1/6
Description
The BTD2510F3 is a
NPN Darlington
transistor, designed for general purpose amplifier and low speed switching application.
Features:
High BVCEO Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors Pb-free lead plating package
Equivalent Circuit
BTD2510F3
B
R1≈4k R2≈60
B：Base C：Collector E：Emitter
E
C
Outline
TO-263
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range Storage Temperature Range Note : *1. Single Pulse Pw=300μs
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃)
Pd(TC=25℃)
Tj Tstg
BTD2510F3
Limits
250 250 10 10 15
2
100
-55~+150 -55~+150
*1
Unit V V V
A
W
°C °C
CYStek Product Specification
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