1. COLLECTOR 2. BASE 3. EMITTER
BC337/338(NPN)
TO-92 Bipolar Transistors
TO-92
Features
Power dissipation
MAXIMUM RAT...
1. COLLECTOR 2. BASE 3. EMITTER
BC337/338(
NPN)
TO-92 Bipolar
Transistors
TO-92
Features
Power dissipation
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
BC337 BC338
VCEO
Collector-Emitter Voltage BC337 BC338
VEBO IC PD
Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation
Tj Junction Temperature Tstg Storage Temperature
Value 50 30 45 25 5 800 625 150
-55-150
Units
V
V
V mA mW ℃ ℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage BC337
BC338
Emitter-base breakdown voltage
Collector cut-off current
BC337 BC338
Collector cut-off current
BC337
BC338
Emitter cut-off current
BC337/BC338 BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter v...