TGF4350-EPU

Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x 0.4064 mm Primary Applications Low Noise amplifiers 17 F = 10 GHz Vd = 3 V 15 Iq = 15 mA 13 80 70 60 Power Added Efficiency- Output Power-dBm, Gain-d 11 50 9 40 7 30 5 3 1 -12 -8 -4 0 4 Input Power - dBm Pout (dBm) Gain (dB) PAE (%) 8 20 10 0 12 2.4 16 F = 10 GHz 2.2 15 2.0 14 1.8 13 Associated Gain - dB Noise Figure - dB 1.6 12 1.4 11 1.2 10 1.0 0.8 0.6 0.4 5 9 8 7 6 10 15 20 25 30 35 40 45 50 Drain Current - mA NF (dB) Vd = 3 V NF (dB) Vd = 5 V NF (dB) Vd = 8 V Gain (dB) Vd = 3 V Gain (dB) Vd = 5 V Gain (dB) Vd = 8 V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subjec...