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TTA004B

Toshiba

Silicon PNP Epitaxial Type Bipolar Transistors

Bipolar Transistors Silicon PNP Epitaxial Type TTA004B 1. Applications • Audio-Frequency Amplifiers 2. Features (1) High...


Toshiba

TTA004B

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Description
Bipolar Transistors Silicon PNP Epitaxial Type TTA004B 1. Applications Audio-Frequency Amplifiers 2. Features (1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commercial production 2013-05 2017-01-09 Rev.2.0 TTA004B 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 Emitter-base voltage VEBO -6 Collector current (...




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