Power MOSFET
IRLI640G, SiHLI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 5.0 V
66 9.0 38 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Dist. 4.8 mm Logic-Leve...
