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SiHLI640G Dataheets PDF



Part Number SiHLI640G
Manufacturers Vishay
Logo Vishay
Description ower MOSFET
Datasheet SiHLI640G DatasheetSiHLI640G Datasheet (PDF)

Power MOSFET IRLI640G, SiHLI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0 V 66 9.0 38 Single 0.18 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V • Fast Switching • Ease of paralleling • Lead (Pb)-free Available Available RoHS* COMP.

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Power MOSFET IRLI640G, SiHLI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0 V 66 9.0 38 Single 0.18 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V • Fast Switching • Ease of paralleling • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10.


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