E3M0120090D

VDS 900 V E3M0120090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 23 A RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package 3rd generation SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Automotive EV battery chargers Renewable energy High voltage DC/DC converters Part Number E3M0120090D Package TO-247-3 Marking E3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage (Recommended operating values) ID Continuous Drain...