Power Transistors
2SC5413
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High br...
Power
Transistors
2SC5413
Silicon
NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1700
V
Collector to emitter voltage
VCES
1700
V
VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Base current
IB
10
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
200 W
3.5
Junction temperature Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time
IEBO hFE VCE(sat) VBE(sat) fT tstg tf
Conditions VCB = 1000V, IE = 0 VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
20.0±0.5 2.5
Solder Dip
26.0±0.5
1.5
10.0 6.0
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
3.0
2.0 4.0
2.0
1.5
2.0±0.3 3.0±0.3 1.0±0.2
5.45±0.3 10.9±0.5
1.5 2.7±0.3
0.6±0.2
123
1:Base 2:Collector 3:Emitter TOP–3L Package
min
typ
max Unit
50
µA
1
mA
50
µA
7
14
3
V
1.5
V
3
...
