SRAM. IC61LV5128 Datasheet

IC61LV5128 Datasheet PDF


Part

IC61LV5128

Description

512K x 8 Hight Speed SRAM

Manufacture

ICSI

Page 9 Pages
Datasheet
Download IC61LV5128 Datasheet


IC61LV5128 Datasheet
IC61LV5128
Document Title
512K x 8 Hight Speed SRAM with 3.3V
Revision History
Revision No
0A
History
Initial Draft
Draft Date
Remark
September 11,2001
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution, Inc.
AHSR021-0A 09/11/2001
1

IC61LV5128 Datasheet
IC61LV5128
512K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times:
— 8, 10, 12 and 15 ns
• High-preformance, lower-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
CE power-down
• Fully static operation: no clock or refresh
reguired
• TTL compatible inputs and outputs
• Single 3.3V ± 10% power supply
• Packages available:
— 36-pin 400mil SOJ
— 44-pin TSOP-2
DESCRIPTION
The ICSI IC61LV5128 is a very high-speed, low power,
524,288-word by 8-bit COMS static RAM. The IC61LV5128 is
fabricated using ICSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher preformance and low power
consumotion devices.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250 µW (typical) with CMOS input levels.
The IC61LV5128 operates from a single 3.3V power supply and
all inputs are TTL-compatible.
The IC61LV5128 is available in 36-pin, 400mil SOJ and 44-pin
TSOP-2 package.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
512K X 8
MEMORY ARRAY
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.
2 Integrated Circuit Solution, Inc.
AHSR021-0A 09/11/2001


Features Datasheet pdf IC61LV5128 Document Title 512K x 8 High t Speed SRAM with 3.3V Revision Histor y Revision No 0A History Initial Draf t Draft Date Remark September 11,200 1 The attached datasheets are provided by ICSI. Integrated Circuit Solution I nc reserve the right to change the spec ifications and products. ICSI will answ er to your questions about device. If y ou have any questions, please contact t he ICSI offices. Integrated Circuit So lution, Inc. AHSR021-0A 09/11/2001 1 IC61LV5128 512K x 8 HIGH-SPEED CMOS STA TIC RAM FEATURES • High-speed access times: — 8, 10, 12 and 15 ns • Hig h-preformance, lower-power CMOS process • Multiple center power and ground p ins for greater noise immunity • Easy memory expansion with CE and OE option s • CE power-down • Fully static op eration: no clock or refresh reguired TTL compatible inputs and outputs Single 3.3V ± 10% power supply • P ackages available: — 36-pin 400mil SO J — 44-pin TSOP-2 DESCRIPTION The ICSI IC61LV5128 is a very .
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