180N10B

NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Test  Pb-Free and RoHS compliance Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C Junction Temperature VDSS VGSS ID IDL IDP PD Tj 100 V 20 V 180 A 100 A 600 A 2.1 200 W 175 C Storage Temperature Tstg 55 to +175 C Source Current (Body Diode) Avalanche Energy (Single Pulse) (Note 2) IS EAS 100 A 451 mJ Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL 260 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and...