ITU04N65R

ITU04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE ITU04N65R TO-251 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter ITU04N65R VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *2) 650 4 16 Power Dissipation PD Derating Factor above 25℃ 75 0.6 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy（L=10mH） ±30 200 TL Maximum Temperature for Soldering 300 Operating Junction and Storage TJ and TSTG Temperature Range (NOTE *1) 150，-55 to150 Units V A A W W/℃ V mJ ℃ Thermal Resistance Symbol Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ. 1.67 100 Units ℃∕W Test Condi...