TSM4NC60CI

TSM4NC60CI Taiwan Semiconductor N-Channel Power MOSFET 600V, 4A, 2.5Ω FEATURES ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● AC/DC LED Lighting ● Power Supply KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 V 2.5 Ω 18 nC ITO-220 Not Recommended ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PDTOT EAS IAS TJ, TSTG 600 ±30 4 1.8 12 40 152 3.9 - 55 to +150 UNIT V V A A W mJ A °C THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case ...